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PJQ2815_R1_00001

Part No PJQ2815_R1_00001
Manufacturer Panjit
Catalog Transistors - FETs, MOSFETs - RF
Description DFN2020-6L, MOSFET / Mosfet Array 2 P-Channel (Dual) 20V 4.2A (Ta) 1.5W (Ta) Surface Mount DFN2020-6L
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Panjit International Inc.
Package Tape & Reel
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta)
Rds On (Max) @ Id, Vgs 52mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 907pF @ 10V
Power - Max 1.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 6-VDFN Exposed Pad
Supplier Device Package DFN2020-6L
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 3757-PJQ2815_R1_00001CT,3757-PJQ2815_R1_00001TR,3757-PJQ2815_R1_00001DKR
Standard Package 3,000
Win Source Part Number 1085303-PJQ2815_R1_00001
Ultra Librarian 3D Model Ultra Librarian PJQ2815_R1_00001 CAD Model

Description

The PJQ2815_R1_00001 dual P-channel MOSFET array from Panjit is designed for use in discrete semiconductor products.

  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 4.2A @ 25°C
  • Maximum On-Resistance: 52mOhm @ 4.2A and 4.5V gate to source voltage
  • Package: 6-VDFN exposed pad
  • Maximum Power Dissipation: 1.5W @ ambient temperature
  • Gate Charge: 24nC @ 4.5V
  • Input Capacitance: 907pF @ 10V drain to source voltage
  • Temperature Range: -55°C to 150°C
  • ECCN: EAR99 compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3917 $58.7550
360+ $0.3215 $115.7400
560+ $0.3114 $174.3840
770+ $0.3014 $232.0780
995+ $0.2913 $289.8435
1,330+ $0.2612 $347.3960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,295 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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