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PJS6407_S1_00001

Part No PJS6407_S1_00001
Manufacturer Panjit
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Panjit International Inc.
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 64mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 528 pF @ 15 V
Power Dissipation (Max) 2W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-23-6
Package / Case SOT-23-6
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1315544-PJS6407_S1_00001
Ultra Librarian 3D Model Ultra Librarian PJS6407_S1_00001 CAD Model

Description

The Panjit International Inc. PJS6407_S1_00001 is a P-Channel MOSFET transistor that belongs to the 'Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single' category. The product is available in tape and reel packaging with SMD (SMT) mounting. The product has a maximum drain to source voltage (Vdss) of 30V and a continuous drain current (Id) of 4.9A (Ta) at 25°C. The product has a maximum Rds On of 64mOhm at 4.9A and 10V and a maximum Vgs(th) of 2.1V at 250μA. The product has a maximum power dissipation of 2W (Ta) and a maximum gate charge (Qg) of 14nC at 10V. The input capacitance (Ciss) is 528pF at 15V, and the maximum Vgs is ±20V. The product is manufactured by Panjit International Inc.

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