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Same model may have multiple batches, images only for reference.
PJW4N06A_R2_00001 Real Image
Same model may have multiple batches, images only for reference.

PJW4N06A_R2_00001

Part No PJW4N06A_R2_00001
Manufacturer Panjit
Catalog Transistors - FETs, MOSFETs - RF
Description 60V N-CHANNEL ENHANCEMENT MODE M / N-Channel 60 V 4A (Ta) 3.1W (Ta) Surface Mount SOT-223
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Panjit International Inc.
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.1 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 509 pF @ 15 V
Power Dissipation (Max) 3.1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 3757-PJW4N06A_R2_00001DKR,3757-PJW4N06A_R2_00001CT,3757-PJW4N06A_R2_00001TR
Standard Package 2,500
Win Source Part Number 1085351-PJW4N06A_R2_00001
Ultra Librarian 3D Model Ultra Librarian PJW4N06A_R2_00001 CAD Model

Description

The Panjit International Inc. N-Channel MOSFET (Metal Oxide) is a high-performance transistor with a Drain to Source Voltage (Vdss) of 60 V and a Current - Continuous Drain (Id) of 4A (Ta).

  • Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
  • Package: TO-261-4, TO-261AA
  • Mounting: SMD (SMT)
  • Operating Temperature Range: from -55°C to 150°C (TJ)

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