The TGA2219-CP is a high-power, wideband GaN (Gallium Nitride) MMIC (Monolithic Microwave Integrated Circuit) amplifier manufactured by Qorvo US Inc. It is designed for various applications requiring high power and efficiency in a compact form factor, such as radar, communications, and electronic warfare systems.

Applications:

• Radar systems
• Communication systems
• Electronic warfare (EW) systems
• Test and measurement equipment
• Broadband amplifiers

Features:

• Frequency range: 2 GHz to 6 GHz
• Output power: 10 W (typical)
• Power Gain: 28 dB (typical)
• Power Added Efficiency (PAE): 45% (typical)
• Small signal gain: 30 dB (typical)
• Input return loss: 15 dB (typical)
• Output return loss: 15 dB (typical)
• Supply voltage: +28 V
• Chip size: 3.15 x 2.15 mm

Benefits:

• High output power enables long-range operation in radar and communication systems.
• High PAE reduces power consumption and heat dissipation, improving system efficiency.
• Wide bandwidth supports multiple applications and frequencies.
• Compact size facilitates integration into small form factor systems.
• Consistent performance across a wide frequency range.

Additional Details:

The TGA2219-CP is fabricated using Qorvo's GaN-on-SiC technology, providing excellent power density and thermal conductivity. This allows the amplifier to operate at high power levels while maintaining a reasonable junction temperature. The amplifier requires external matching components to achieve optimal performance. The TGA2219-CP is supplied as a die and is suitable for integration into hybrid modules or surface mount assemblies. It requires a positive drain voltage and a negative gate voltage for proper biasing. The amplifier is designed to operate over a temperature range of -40°C to +85°C.