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RM25P30S8

Part No RM25P30S8
Manufacturer Rectron USA
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CHANNEL 30V 25A 8SOP / P-Channel 30 V 25A (Ta) 3.5W (Ta) Surface Mount 8-SOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Rectron USA
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3960 pF @ 15 V
Power Dissipation (Max) 3.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP
Package / Case 8-SOIC (0.154", 3.90mm Width)
Standard Package 40,000 pcs
MSL Level 1 (Unlimited)
HTSUS 8541.10.0080
Win Source Part Number 932255-RM25P30S8
Ultra Librarian 3D Model Ultra Librarian RM25P30S8 CAD Model

Description

The 932255-RM25P30S8 is a P-channel MOSFET transistor designed for high-performance applications. With a drain to source voltage of 30V and a continuous drain current of 25A, this MOSFET offers efficient power management in various electronic circuits. It has a low on-resistance of 9mOhm @ 15A and 10V, ensuring minimal power loss and high efficiency. The 932255-RM25P30S8 is surface mountable and comes in an 8-SOIC package, providing easy integration into circuit boards. It has a maximum gate-source voltage of ±20V, allowing for flexible control options. With an operating temperature range of -55°C to 150°C, this MOSFET can withstand extreme environments. Manufactured by Rectron USA, the 932255-RM25P30S8 is a reliable and high-performance transistor for your electronic projects.

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