The 2SA1413-K(AZ) is a PNP silicon epitaxial planar transistor manufactured by Renesas Electronics America. This transistor is designed for high-frequency power amplification applications. Its high power gain and good linearity make it suitable for use in RF amplifiers and oscillators in VHF and UHF bands.

Applications

• RF power amplifiers
• Oscillators
• VHF/UHF transmitters
• Mobile communication devices
• Wireless systems

Features

• High power gain
• Good linearity
• High cutoff frequency (fT = 1.8 GHz)
• PNP Silicon Epitaxial Planar Transistor
• Low feedback capacitance

Benefits

• Improved RF signal amplification
• Enhanced signal transmission efficiency
• Reduced signal distortion
• Stable operation in high-frequency circuits
• High performance in wireless applications

Additional Details

The 2SA1413-K(AZ) has a collector-emitter voltage (VCEO) of -20V, a collector current (IC) of -150mA, and a power dissipation of 800mW. The DC current gain (hFE) is typically in the range of 50 to 200. It is housed in a SOT-89 surface mount package. The high cutoff frequency enables operation at high frequencies without significant performance degradation. The low feedback capacitance minimizes signal distortion and improves amplifier stability. This transistor is known for its robust performance and reliability in RF power amplifier applications.

The 'K' likely indicates a specific gain range, and AZ probably refers to a packaging or marking variation. Consult the Renesas datasheet for precise electrical characteristics and application guidelines.