The 2SC2618RDTLE is a silicon NPN epitaxial planar transistor manufactured by Renesas Electronics America. This transistor is designed for use in various amplifier and switching applications. It boasts a high collector current and voltage rating, making it suitable for medium-power applications.

Applications:

• Audio amplifiers
• Switching regulators
• DC-DC converters
• Motor control circuits
• General-purpose amplification

Features:

• High collector current (Ic = 1.5 A)
• High collector-emitter voltage (Vceo = 60 V)
• Low saturation voltage
• High transition frequency (fT = 100 MHz typ.)
• Excellent hFE linearity

Benefits:

• Improved amplifier performance due to high gain and linearity.
• Efficient switching operation in power supplies.
• Reduced power dissipation due to low saturation voltage.
• Enhanced circuit reliability because of its high voltage and current handling capabilities.
• Simplified circuit design due to its versatile characteristics.

Additional Details:

The 2SC2618RDTLE comes in a TO-126 package. Its high transition frequency allows it to be used in high-speed switching circuits. The transistor's hFE is typically between 100 and 300, which provides good amplification characteristics. It is RoHS compliant, ensuring environmental friendliness.

Technical Specifications:

• Collector-Emitter Voltage (VCEO): 60 V
• Collector-Base Voltage (VCBO): 70 V
• Emitter-Base Voltage (VEBO): 6 V
• Collector Current (IC): 1.5 A
• Collector Dissipation (PC): 1.2 W
• Transition Frequency (fT): 100 MHz (typical)
• Operating Temperature: -55°C to +150°C