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Same model may have multiple batches, images only for reference.
2SK3408-T1B-AT
Same model may have multiple batches, images only for reference.

2SK3408-T1B-AT

Part No 2SK3408-T1B-AT
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 43V 1A SC96-3
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 43 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 195mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 230 pF @ 10 V
Power Dissipation (Max) 200mW (Ta)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package SC-96-3, Thin Mini Mold
Package / Case SC-96
Standard Package 3,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 855420-2SK3408-T1B-AT
Ultra Librarian 3D Model Ultra Librarian 2SK3408-T1B-AT CAD Model

Description

The 2SK3408-T1B-AT is a single N-channel MOSFET transistor designed for discrete semiconductor applications and is an obsolete product from Renesas Electronics America.

  • Package: Tape and reel
  • Vdss: 43V
  • Id: 1A @ 25°C
  • Rds On: 195mOhm @ 500mA and Vgs @ 10V
  • Vgs(th): 2.5V @ 1mA
  • Power dissipation: 200mW
  • Maximum temperature: 150°C
  • Mounting: Surface mount
  • Package: SC-96
  • Gate charge: 4nC @ Vgs @ 10V
  • Product Status: Obsolete

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