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2SK3431-Z-E1-AZ

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	2SK3431-Z-E1-AZ
Manufacturer	Renesas Electronics America
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 40V 83A TO220AB
Datasheet	2SK3431-Z-E1-AZ Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Renesas Electronics America
Packaging	Tube/Rail
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	40V
Continuous Drain Current at 25°C	83A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Max Gate Charge	110nC @ 10V
Max Input Capacitance	6100pF @ 10V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	1.5W (Ta), 100W (Tc)
Maximum Rds On at Id,Vgs	5.6 mOhm @ 42A, 10V
Temperature Range - Operating	150°C (TJ)
Mounting	Through Hole
Case / Package	TO-220AB
Dimension	TO-220-3
Win Source Part Number	119356-2SK3431-Z-E1-AZ
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian 2SK3431-Z-E1-AZ CAD Model

Alternative Products

Description

The Renesas Electronics America 2SK3431-Z-E1-AZ is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that falls under the category of Discrete Semiconductor Products.

Popularity: Medium
Supply and Demand Status: Balanced
Win Source Part Number: 119356-2SK3431-Z-E1-AZ
Maximum Power Dissipation: 1.5W (Ta) and 100W (Tc)
Technology: N-Channel
Drain-Source Breakdown Voltage: 40V
Maximum Rds On at Id, Vgs: 5.6 mOhm @ 42A, 10V
Packaging: Tube/Rail
Mounting: Through Hole

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