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Same model may have multiple batches, images only for reference.
HAT1072H-EL Real Image
Same model may have multiple batches, images only for reference.

HAT1072H-EL

Part No HAT1072H-EL
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 40A LFPAK
Datasheet
HAT1072H-EL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 155nC @ 10V
Max Input Capacitance 9500pF @ 10V
Maximum Gate-Source Voltage +10V, -20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 20A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 067784-HAT1072H-EL
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian HAT1072H-EL CAD Model

Description

The Renesas Electronics America HAT1072H-EL is a P-channel MOSFET with a package size of LFPAK. Supply and demand are limited in the open market.

  • Power Dissipation (Max): 30W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Rds On (Maximum) @ Id,Vgs: 4.5 mOhm @ 20A, 10V
  • Gate-Source Voltage (Maximum): +10V, -20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.0516 $54.4644
21+ $4.9655 $104.2755
32+ $4.8103 $153.9296
43+ $4.6551 $200.1693
56+ $4.5000 $252.0000
75+ $4.0344 $302.5800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 400 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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