The 141112-HAT1089C-EL-E is a P-channel MOSFET transistor from Renesas Electronics America. It is a discrete semiconductor product. This MOSFET features a drain to source voltage (Vdss) of 20V and a continuous drain current (Id) of 2A at 25°C. Currently marked as obsolete.

• Drain to Source Voltage (Vdss): 20V
• Continuous Drain Current (Id): 2A @ 25°C
• Rds On (Max): 103mOhm @ 1A, 4.5V
• Gate-Source Threshold Voltage (Vgs(th)): 1.4V @ 1mA
• Power Dissipation: 850mW
• Mounting: Surface Mount
• Package: 6-SMD, flat leads (6-CMFPAK)
• Gate Charge (Qg): 4.5nC @ 4.5V
• Input Capacitance (Ciss): 365pF @ 10V
• Maximum Gate-Source Voltage (Vgs): ±12V
• Operating Temperature Range: Up to 150°C
• Status: Obsolete