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HAT2025R-EL-E

Part No HAT2025R-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Series *
Package Bulk
Product Status Active
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 595977-HAT2025R-EL-E
Ultra Librarian 3D Model Ultra Librarian HAT2025R-EL-E CAD Model

Description

The HAT2025R-EL-E is an N-channel power MOSFET from Renesas Electronics America, designed for high-efficiency switching applications. This device is specifically optimized for load switching and power management circuits, providing low on-resistance and fast switching speeds. It is designed to minimize power loss and enhance overall system efficiency.

Applications

  • Load Switching
  • DC-DC Converters
  • AC-DC Power Supplies
  • Motor Control Circuits
  • Power Management Systems

Features

  • N-channel MOSFET
  • Low On-Resistance (Rds(on))
  • High-Speed Switching
  • Avalanche Energy Guaranteed
  • RoHS Compliant

Benefits

  • Improved Energy Efficiency
  • Reduced Heat Generation
  • Enhanced System Reliability
  • Simplified Thermal Management
  • Suitable for High-Frequency Applications

Specifications

The HAT2025R-EL-E boasts a drain-source voltage (Vdss) rating that ensures reliable operation within specified voltage ranges. Its low gate charge contributes to faster switching speeds and reduced switching losses. The device is typically available in a surface-mount package, facilitating automated assembly and compact circuit designs. Its avalanche ruggedness is tested and guaranteed, enhancing its resilience against voltage spikes. The low on-resistance minimizes conduction losses, making it an ideal choice for applications where energy efficiency is paramount. The fast switching speed reduces switching losses, further contributing to overall system efficiency. The device's robust design ensures reliable operation even under harsh operating conditions. The combination of these features makes the HAT2025R-EL-E a versatile and dependable solution for a wide range of power electronics applications. This component is designed for efficient thermal dissipation with a low thermal resistance from junction to case, contributing to long-term reliability and stable operation. The device’s enhanced avalanche ruggedness provides an added layer of protection against transient voltage conditions.

The HAT2025R-EL-E’s low gate charge facilitates fast turn-on and turn-off times, reducing switching losses and improving overall system efficiency. The device’s robust design and reliable performance make it a preferred choice for designers of power management systems. Its compliance with RoHS standards ensures that the device is environmentally friendly. The HAT2025R-EL-E is well-suited for use in battery-powered devices, where efficiency is paramount. Its ability to handle high current levels makes it suitable for a variety of load switching applications. The device is also designed to minimize electromagnetic interference (EMI), ensuring reliable operation in noisy environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,350 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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