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Same model may have multiple batches, images only for reference.
HAT2099H-EL Real Image
Same model may have multiple batches, images only for reference.

HAT2099H-EL

Part No HAT2099H-EL
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A LFPAK
Datasheet
HAT2099H-EL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 75nC @ 10V
Max Input Capacitance 4750pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 3.7 mOhm @ 25A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 067790-HAT2099H-EL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HAT2099H-EL CAD Model

Description

The HAT2099H-EL is an N-Channel MOSFET electronic component manufactured by Renesas Electronics America. It has a maximum power dissipation of 30W (Tc) and a continuous drain current of 50A (Ta). The supply and demand status of this product is balanced. It is a reliable choice for electronic applications that require high performance and stability. It has been designed to provide optimum functionality and can be used in various electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0095 $60.5700
140+ $0.8281 $115.9340
220+ $0.8027 $176.5940
300+ $0.7762 $232.8600
385+ $0.7508 $289.0580
515+ $0.6734 $346.8010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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