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Same model may have multiple batches, images only for reference.
HAT2131R-EL-E Real Image
Same model may have multiple batches, images only for reference.

HAT2131R-EL-E

Part No HAT2131R-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 8SO
Datasheet
HAT2131R-EL-E Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 350V
Continuous Drain Current at 25°C 900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Max Gate Charge 20nC @ 10V
Max Input Capacitance 460pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 3 Ohm @ 450mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 092207-HAT2131R-EL-E
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HAT2131R-EL-E CAD Model

Description

The Renesas Electronics America HAT2131R-EL-E is a MOSFET technology product with N-Channel polarity.

  • Technology: MOSFET
  • Polarity: N-Channel
  • Maximum Power Dissipation: 2.5W (Ta)
  • Drain-Source Breakdown Voltage: 350V
  • Status: Active
  • Supply and Demand: In Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8778 $61.4460
165+ $0.7207 $118.9155
250+ $0.6976 $174.4000
345+ $0.6757 $233.1165
445+ $0.6526 $290.4070
595+ $0.5856 $348.4320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,060 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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