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Same model may have multiple batches, images only for reference.
HAT2164H Renesas Electronics America
Same model may have multiple batches, images only for reference.

HAT2164H

Part No HAT2164H
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 60A 5LFPAK
Datasheet
HAT2164H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 50nC @ 4.5V
Max Input Capacitance 7600pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 3.1 mOhm @ 30A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 204570-HAT2164H
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian HAT2164H CAD Model

Description

The Renesas Electronics America HAT2164H is a MOSFET transistor designed for use in discrete semiconductor products. This is an N-channel transistor.

  • Maximum Power Dissipation: 30W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 60A (Ta) @ 25°C
  • Maximum Gate Charge: 50nC @ 4.5V
  • Maximum Rds On: 3.1 mOhm @ 30A, 10V
  • Package: LFPAK
  • Mounting: SMD (SMT)
  • Maximum Input Capacitance: 7600pF @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Alternative Parts: PSMN2R0-30YL, RJK0301DPB-00-J0, HAT2164H-EL-E
  • Status: Active, medium popularity, limited supply and demand

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Quantity Unit Price Ext. Price
100+ $0.5867 $58.6700
240+ $0.4816 $115.5840
375+ $0.4666 $174.9750
515+ $0.4516 $232.5740
665+ $0.4366 $290.3390
885+ $0.3915 $346.4775
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