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HAT2169H-EL-E Renesas Electronics America HAT2169H-EL-E Real Image HAT2169H-EL-E Real Image1 HAT2169H-EL-E Real Image2 HAT2169H-EL-E Real Image3 HAT2169H-EL-E Real Image4 HAT2169H-EL-E Real Image5 HAT2169H-EL-E Real Image6
Same model may have multiple batches, images only for reference.
HAT2169H-EL-E Renesas Electronics America HAT2169H-EL-E Real Image HAT2169H-EL-E Real Image1 HAT2169H-EL-E Real Image2 HAT2169H-EL-E Real Image3 HAT2169H-EL-E Real Image4 HAT2169H-EL-E Real Image5 HAT2169H-EL-E Real Image6
HAT2169H-EL-E Renesas Electronics America HAT2169H-EL-E Real Image HAT2169H-EL-E Real Image1 HAT2169H-EL-E Real Image2 HAT2169H-EL-E Real Image3 HAT2169H-EL-E Real Image4 HAT2169H-EL-E Real Image5 HAT2169H-EL-E Real Image6
Same model may have multiple batches, images only for reference.

HAT2169H-EL-E

Part No HAT2169H-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 40V 50A 5-Pin(4+Tab) LFPAK T/R / MOSFET N-CH 40V 50A LFPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 50A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 45nC @ 4.5V
Max Input Capacitance 6650pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 25A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 067803-HAT2169H-EL-E
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name HAT2169H
Introduction Date October 07, 2003
ECCN EAR99
Country of Origin Malaysia
Halogen Free Not Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian HAT2169H-EL-E CAD Model

Description

The Renesas Electronics America HAT2169H-EL-E is a MOSFET transistor designed for use in discrete semiconductor products.

Key aspects:

  • Type: N-channel MOSFET
  • Power Dissipation: 30W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 50A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Gate Charge: 45nC @ 4.5V
  • Rds On: 3.5 mOhm @ 25A, 10V
  • Package: LFPAK
  • Mounting: SMD (SMT)
  • Input Capacitance: 6650pF @ 10V
  • Gate-Source Voltage: ±20V
  • Alternative Parts: BUK9Y3R0-40E, BUK7Y3R5-40E, BUK7Y3R5-40E,115
  • Status: Active
  • Popularity: High
  • Supply and Demand: Balanced

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13+ $11.5672 $150.3736
18+ $11.1941 $201.4938
24+ $10.8209 $259.7016
31+ $9.7015 $300.7465
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