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HAT2199R-EL-E

Part No HAT2199R-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A 8SOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Rds On (Max) @ Id, Vgs 16.5mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 10 V
Power Dissipation (Max) 2W (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP
Package / Case 8-SOIC (0.154", 3.90mm Width)
Standard Package 2,500 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 141256-HAT2199R-EL-E
Ultra Librarian 3D Model Ultra Librarian HAT2199R-EL-E CAD Model

Description

The 141256-HAT2199R-EL-E is a N-Channel MOSFET (Metal Oxide) transistor designed for use in discrete semiconductor products.

  • Vdss: 30V
  • Id (at 25°C): 11A
  • Rds On (Max): 16.5mOhm @ 5.5A, 10V
  • Qg (at 4.5V): 7.5nC
  • Ciss (at 10V): 1060pF
  • Package Type: 8-SOIC (Surface Mountable)
  • Status: Obsolete
  • Manufacturer: Renesas Electronics America
  • Applications: Power supplies, motor control, and lighting systems.

Please note that this product is no longer in production and may not be readily available in the market.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,571 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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