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Same model may have multiple batches, images only for reference.
NESG2101M05-T1-A CEL
Same model may have multiple batches, images only for reference.

NESG2101M05-T1-A

Part No NESG2101M05-T1-A
Manufacturer Renesas Electronics America
Catalog RF Transistors (BJT)
Description NESG2101 - NPN SIGE RF TRANSISTO
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 5V
Frequency - Transition 17GHz
Noise Figure (dB Typ @ f) 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
Gain 11dB ~ 19dB
Power - Max 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce 130 @ 15mA, 2V
Current - Collector (Ic) (Max) 100mA
Mounting Type Surface Mount
Package / Case SOT-343F
Supplier Device Package M05
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 252175-NESG2101M05-T1-A
Ultra Librarian 3D Model Ultra Librarian NESG2101M05-T1-A CAD Model

Description

The 252175-NESG2101M05-T1-A is a bipolar RF transistor used in various applications.

  • Category: Discrete semiconductor products
  • Sub-category: Bipolar (BJT) transistors
  • Transistor type: NPN
  • Maximum power rating: 500mW
  • Voltage collector-emitter breakdown: 5V
  • Maximum collector current: 100mA
  • Gain: 11dB to 19dB
  • Frequency transition: 17GHz
  • Package type: Surface mount
  • Case: SOT-343F
  • Manufactured by: Renesas Electronics America
  • Status: Now obsolete
  • Alternative parts: Available for cross-reference
  • Usage: Widely used in RF applications during its active product status.

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380+ $0.2650 $100.7000
590+ $0.2561 $151.0990
840+ $0.2382 $200.0880
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1,365+ $0.2203 $300.7095
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