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NP100N055PUK-E1-AY

Part No NP100N055PUK-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 100A TO-263
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 7350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 176W (Tc)
Maximum Rds On at Id,Vgs 3.25 mOhm @ 50A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083285-NP100N055PUK-E1-AY
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian NP100N055PUK-E1-AY CAD Model

Description

The Renesas Electronics America NP100N055PUK-E1-AY MOSFET is a high-performance N-channel power MOSFET that operates @ a maximum power dissipation of 1.8W (Ta) and 176W (Tc).

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C (Tc): 100A
  • Gate-Source Threshold Voltage @ 250μA: 4V
  • Maximum Rds On @ 50A, 10V: 3.25 mOhm
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Applications: Discrete Semiconductor Products applications
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance @ 25V: 7350pF
  • Supply and Demand Status: Sufficient
  • Quantity per Package: 800

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