The Renesas Electronics America MOSFET is a N-channel power transistor with a drain-source breakdown voltage of 55V and a continuous drain current of 110A at 25°C. Bold the product name (e.g., MOSFET) and manufacturer (e.g., Renesas Electronics America).

• Channel Type: N-channel
• Drain-Source Breakdown Voltage: 55V
• Continuous Drain Current @ 25°C: 110A
• Power Dissipation (Ta): 1.8W
• Power Dissipation (Tc): 220W
• Gate-Source Threshold Voltage @ 250μA: 4V
• Package: TO-263AB
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On @ Id,Vgs: 3.2 mOhm @ 55A, 10V
• Status: obsolete(EOL)
• Popularity: medium
• Supply and Demand Status: balanced