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NP180N04TUJ-E1-AY

Part No NP180N04TUJ-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 180A TO-263-7
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 230nC @ 10V
Max Input Capacitance 14250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 348W (Tc)
Maximum Rds On at Id,Vgs 1.5 mOhm @ 90A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263-7
Dimension TO-263-7, D2Pak (6 Leads + Tab)
Win Source Part Number 1083306-NP180N04TUJ-E1-AY
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP180N04TUJ-E1-AY CAD Model

Description

The Renesas Electronics America MOSFET is an N-channel power transistor that is suitable for use in various electronic devices.

  • Maximum Power Dissipation: 1.8W @ 175 degrees Celsius
  • Case/Package: TO-263-7
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 180A @ 25 degrees Celsius
  • Maximum Gate Charge: 230nC @ 10V
  • Maximum Input Capacitance: 14250pF @ 25V
  • Maximum Rds On @ Id, Vgs: 1.5 mOhm @ 90A, 10V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $22.9533 $68.8599
7+ $18.8334 $131.8338
10+ $18.2455 $182.4550
14+ $17.6565 $247.1910
17+ $17.0674 $290.1458
23+ $15.3026 $351.9598
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,000 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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