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Same model may have multiple batches, images only for reference.
NP180N04TUK-E1-AY Renesas Electronics America
Same model may have multiple batches, images only for reference.

NP180N04TUK-E1-AY

Part No NP180N04TUK-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 180A TO-263
Datasheet
NP180N04TUK-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 297nC @ 10V
Max Input Capacitance 15750pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 348W (Tc)
Maximum Rds On at Id,Vgs 1.05 mOhm @ 90A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263-7
Dimension TO-263-7, D2Pak (6 Leads + Tab)
Win Source Part Number 041939-NP180N04TUK-E1-AY
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian NP180N04TUK-E1-AY CAD Model

Description

The Renesas Electronics America 041939-NP180N04TUK-E1-AY is a high-performance MOSFET that is designed to deliver efficient power.

  • Supply and demand status: limited
  • Type: N-channel MOSFET
  • Maximum Power Dissipation: 1.8W (Ta), 348W (Tc)
  • Continuous Drain Current: 180A (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 1.05 mOhm @ 90A, 10V
  • Package: TO-263-7 case with 6 leads + tab
  • Mounting: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $5.2046 $62.4552
28+ $4.2705 $119.5740
42+ $4.1370 $173.7540
58+ $4.0036 $232.2088
75+ $3.8701 $290.2575
100+ $3.4698 $346.9800
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Availability: 10,300 pieces
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