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Same model may have multiple batches, images only for reference.
NP55N03SUG-E1-AY Renesas Electronics America
Same model may have multiple batches, images only for reference.

NP55N03SUG-E1-AY

Part No NP55N03SUG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 55A TO-252
Datasheet
NP55N03SUG-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 93nC @ 10V
Max Input Capacitance 5300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.2W (Ta), 77W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 28A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252 (MP-3ZK)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083336-NP55N03SUG-E1-AY
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NP55N03SUG-E1-AY CAD Model

Description

The Renesas Electronics America NP55N03SUG-E1-AY is a MOSFET transistor that features an N-channel polarity and a drain-source breakdown voltage of 30V.

  • Maximum Power Dissipation: 1.2W (Ta) and 77W (Tc)
  • Temperature Range: 175°C (TJ)
  • Supply and Demand: Sufficient
  • Use: Discrete semiconductor products

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