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NP60N03KUG-E1-AY

Part No NP60N03KUG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 60A TO263
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 25 V
Power Dissipation (Max) 1.8W (Ta), 88W (Tc)
Temperature Range - Operating 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 800 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 856829-NP60N03KUG-E1-AY
Ultra Librarian 3D Model Ultra Librarian NP60N03KUG-E1-AY CAD Model

Description

The 856829-NP60N03KUG-E1-AY is a N-Channel MOSFET transistor designed for use in various electronic applications. It has a drain to source voltage (Vdss) of 30V and a continuous drain current (Id) of 60A @ 25°C. With a maximum on-resistance (Rds On) of 4.8mOhm @ 30A and 10V, this MOSFET offers efficient power management capabilities. The gate charge (Qg) is 93nC @ 10V, and the input capacitance (Ciss) is 5300pF @ 25V. The maximum gate-source voltage (Vgs) is ±20V, and the operating temperature range is up to 175°C. This MOSFET is surface mountable and comes in a TO-263-3 package. It is manufactured by Renesas Electronics America, a trusted brand in the semiconductor industry. The NP60N03KUG-E1-AY is an obsolete product, but it has been widely used in various applications requiring high power and voltage switching capabilities.

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