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UPA2814T1S-E2-AT

Part No UPA2814T1S-E2-AT
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 24A 8HWSON  /  P-Channel 30 V 24A (Tc) 1.5W (Ta) Surface Mount 8-HWSON (3.3x3.3)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas Electronics America Inc
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.8mOhm @ 24A, 5V
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 10 V
Power Dissipation (Max) 1.5W (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-HWSON (3.3x3.3)
Package / Case 8-PowerWDFN
Base Product Number UPA2814
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -1161-UPA2814T1S-E2-ATCT
Standard Package 5,000
Win Source Part Number 1102459-UPA2814T1S-E2-AT
Ultra Librarian 3D Model Ultra Librarian UPA2814T1S-E2-AT CAD Model

Description

The UPA2814T1S-E2-AT is a P-channel MOSFET transistor manufactured by Renesas Electronics America Inc.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 24A @ 25 degrees Celsius
  • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 24A, 5V
  • Gate Charge: 74 nC @ 10V
  • Input Capacitance: 2800 pF @ 10V
  • Power Dissipation: 1.5W @ Ta
  • Package: 8-PowerWDFN
  • RoHS Compliant: Yes
  • Maximum Operating Temperature: 150 degrees Celsius

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9619 $62.5235
150+ $0.7893 $118.3950
230+ $0.7646 $175.8580
315+ $0.7400 $233.1000
405+ $0.7153 $289.6965
545+ $0.6413 $349.5085
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,230 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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