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Same model may have multiple batches, images only for reference.
NP70N10KUF-E1-AY Renesas Electronics America
Same model may have multiple batches, images only for reference.

NP70N10KUF-E1-AY

Part No NP70N10KUF-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 70A TO-263
Datasheet
NP70N10KUF-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.3V @ 250μA
Max Gate Charge 75nC @ 10V
Max Input Capacitance 3750pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 120W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 35A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083344-NP70N10KUF-E1-AY
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian NP70N10KUF-E1-AY CAD Model

Description

The Renesas Electronics America NP70N10KUF-E1-AY is an N-Channel MOSFET from Renesas Electronics America.

  • Power Dissipation: 1.8W (Ta), 120W (Tc)
  • Temperature Range: 175°C (TJ)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 70A (Tc)
  • Maximum Rds On @ Id, Vgs: 20 mOhm @ 35A, 10V
  • Voltage: 10V

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