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Same model may have multiple batches, images only for reference.
NP82N04PDG-E1-AY Real Image
Same model may have multiple batches, images only for reference.

NP82N04PDG-E1-AY

Part No NP82N04PDG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 82A TO-263
Datasheet
NP82N04PDG-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 9000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 143W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 41A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 258937-NP82N04PDG-E1-AY
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NP82N04PDG-E1-AY CAD Model

Description

The Renesas Electronics America NP82N04PDG-E1-AY is a MOSFET technology N-channel polarity IC designed for use in discrete semiconductor products.

  • Power Dissipation: 1.8W (Ta) and 143W (Tc)
  • Continuous Drain Current: 82A (Tc) @ 25°C
  • Status: obsolete (EOL)
  • Popularity: high
  • Package: TO-263
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8281 $57.9670
170+ $0.6803 $115.6510
265+ $0.6584 $174.4760
365+ $0.6376 $232.7240
470+ $0.6156 $289.3320
630+ $0.5521 $347.8230
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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