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Same model may have multiple batches, images only for reference.
RJK0456DPB-00#J5 Real Image
Same model may have multiple batches, images only for reference.

RJK0456DPB-00#J5

Part No RJK0456DPB-00#J5
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V LFPAK
Datasheet
RJK0456DPB-00#J5 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 50A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 39nC @ 10V
Max Input Capacitance 3000pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 65W (Tc)
Maximum Rds On at Id,Vgs 3.2 mOhm @ 25A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 002108-RJK0456DPB-00#J5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RJK0456DPB-00#J5 CAD Model

Description

The Renesas Electronics America MOSFET is a discrete semiconductor product that is suitable for various electronic applications. The supply and demand status is limited.

  • Win Source Part Number: 002108-RJK0456DPB-00#J5
  • Package: Reel - TR
  • Maximum Power Dissipation: 65W (Tc)
  • Continuous Drain Current: 50A (Ta) @ 25°C
  • Drain-Source Breakdown Voltage: 40V
  • Maximum Rds On @ Id,Vgs: 3.2 mOhm @ 25A, 10V

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