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Same model may have multiple batches, images only for reference.
RJK0852DPB-00#J5 Real Image
Same model may have multiple batches, images only for reference.

RJK0852DPB-00#J5

Part No RJK0852DPB-00#J5
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 30A LFPAK
Datasheet
RJK0852DPB-00#J5 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 28nC @ 4.5V
Max Input Capacitance 4150pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 55W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 15A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 134536-RJK0852DPB-00#J5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RJK0852DPB-00#J5 CAD Model

Description

The Renesas Electronics America RJK0852DPB-00#J5 is a limited-supply MOSFET component in the Discrete Semiconductor Products category. The component has a maximum power dissipation of 55W (Tc), a drain-source breakdown voltage of 80V, and a continuous drain current of 30A (Ta).

  • Package: LFPAK case
  • Temperature Range: 150°C (TJ)
  • Status: Obsolete
  • Replacement: Replaced by newer models

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5822 $55.3770
80+ $1.2983 $103.8640
120+ $1.2577 $150.9240
165+ $1.2171 $200.8215
215+ $1.1766 $252.9690
285+ $1.0548 $300.6180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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