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Same model may have multiple batches, images only for reference.
RJK1001DPP-E0#T2 Real Image
Same model may have multiple batches, images only for reference.

RJK1001DPP-E0#T2

Part No RJK1001DPP-E0#T2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 80A TO220 / Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220FP Tube
Datasheet
RJK1001DPP-E0#T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 80A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate Charge (Qg) (Maximum) @ Vgs 147nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 10000pF @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 30W (Tc)
Rds On (Maximum) @ Id, Vgs 5.5 mOhm @ 40A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220FP
Package TO-220-3 Full Pack
Win Source Part Number 793221-RJK1001DPP-E0#T2
Popularity Medium
Supply and Demand Status Limited
Family Name RJK1001DPP-E0
Introduction Date July 09, 2012
ECCN EAR99
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian RJK1001DPP-E0#T2 CAD Model

Description

The RJK1001DPP-E0#T2 from Renesas Electronics America is a MOSFET electronic component with a medium popularity in the market.

  • Package: TO-220-3 Full Pack
  • Current Continuous Drain: 80A (Ta) @ 25°C
  • Family: RJK1001DPP-E0
  • Application: Discrete Semiconductor Products
  • Drive Voltage: 10V
  • Drain Source Voltage: 100V
  • Power Dissipation (Maximum): 30W (Tc)
  • Rds On: 5.5 mOhm @ 40A, 10V
  • Estimated EOL Date: 2022
  • Supply and Demand Status: limited

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