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Same model may have multiple batches, images only for reference.
RJK6014DPK Real Image
Same model may have multiple batches, images only for reference.

RJK6014DPK

Part No RJK6014DPK
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO220
Datasheet
RJK6014DPK Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 45nC @ 10V
Max Input Capacitance 1800pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 575 mOhm @ 8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 062543-RJK6014DPK
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RJK6014DPK CAD Model

Description

The Renesas Electronics America RJK6014DPK is an active electronic component that is a part of the MOSFET technology.

  • Part Number: The Win Source part number for this component is 062543-RJK6014DPK.
  • Design: This component is designed to be used in electronic applications where a N-Channel polarity MOSFET is required.
  • Power Dissipation: The maximum power dissipation for this component is 150W (Tc), and the maximum gate-source voltage is ±30V.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $22.8840 $68.6520
7+ $18.7768 $131.4376
10+ $18.1901 $181.9010
14+ $17.6034 $246.4476
17+ $17.0166 $289.2822
23+ $15.2564 $350.8972
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,600 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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