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RJK6026DPP-E0#T2

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Part No	RJK6026DPP-E0#T2
Manufacturer	Renesas Electronics America
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 600V 5A TO220FP / N-Channel 600 V 5A (Ta) 28.5W (Tc) Through Hole TO-220FP
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Renesas Electronics America Inc
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Rds On (Max) @ Id, Vgs	2.4Ohm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 25 V
Power Dissipation (Max)	28.5W (Tc)
Temperature Range - Operating	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220FP
Package / Case	TO-220-3 Full Pack
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	2156-RJK6026DPP-E0#T2-RE,RENRNSRJK6026DPP-E0#T2
Standard Package	1
Win Source Part Number	1173391-RJK6026DPP-E0#T2
Ultra Librarian 3D Model	Ultra Librarian RJK6026DPP-E0#T2 CAD Model

Alternative Products

Description

The Renesas Electronics America RJK6026DPP-E0#T2 is a discrete semiconductor product that is designed for transistors, FETs, and MOSFETs.

Power Dissipation: 28.5W
Temperature Range: 150°C
Mounting Type: Through-Hole
Package/Case: TO-220-3 Full Pack
Win Source Part Number: 1173391

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