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Same model may have multiple batches, images only for reference.
RJK6032DPH-E0#T2 Real Image
Same model may have multiple batches, images only for reference.

RJK6032DPH-E0#T2

Part No RJK6032DPH-E0#T2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 3A TO251
Datasheet
RJK6032DPH-E0#T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 9nC @ 10V
Max Input Capacitance 285pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40.3W (Tc)
Maximum Rds On at Id,Vgs 4.3 Ohm @ 1.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-251
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1092322-RJK6032DPH-E0#T2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJK6032DPH-E0#T2 CAD Model

Description

Renesas Electronics America's RJK6032DPH-E0#T2 MOSFET is a high-performance N-channel power MOSFET that is designed to operate at a maximum power dissipation of 40.3W (Tc).

  • Package: TO-251
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current at 25°C: 3A (Ta)
  • Mounting: Through-Hole

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