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Same model may have multiple batches, images only for reference.
RJK60S5DPK-M0#T0
Same model may have multiple batches, images only for reference.

RJK60S5DPK-M0#T0

Part No RJK60S5DPK-M0#T0
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 20A TO3PSG
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Rds On (Max) @ Id, Vgs 178mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V
Mounting Type Through Hole
Supplier Device Package TO-3PSG
Package / Case TO-3P-3, SC-65-3
Standard Package 100 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 891782-RJK60S5DPK-M0#T0
Ultra Librarian 3D Model Ultra Librarian RJK60S5DPK-M0#T0 CAD Model

Description

The RJK60S5DPK-M0#T0 is a N-Channel MOSFET transistor designed for high voltage applications.

  • Drain to Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 20A
  • On-Resistance (Rds On): 178mOhm @ 10A and 10V
  • Package: Through Hole

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