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RJK60S5DPP-E0#T2

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Part No	RJK60S5DPP-E0#T2
Manufacturer	Renesas Electronics America
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 600V 20A TO220FP / N-Channel 600 V 20A (Tc) 33.7W (Tc) Through Hole TO-220FP
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Renesas Electronics America Inc
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Rds On (Max) @ Id, Vgs	178mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1600 pF @ 25 V
FET Feature	Super Junction
Power Dissipation (Max)	33.7W (Tc)
Temperature Range - Operating	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220FP
Package / Case	TO-220-3 Full Pack
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	2156-RJK60S5DPP-E0#T2-RE,RENRNSRJK60S5DPP-E0#T2
Standard Package	100
Win Source Part Number	1182435-RJK60S5DPP-E0#T2
Ultra Librarian 3D Model	Ultra Librarian RJK60S5DPP-E0#T2 CAD Model

Alternative Products

Description

The RJK60S5DPP-E0#T2 is a MOSFET (Metal Oxide) technology type with a Super Junction FET feature from Renesas Electronics America.

Drain to Source Voltage: 600V
Continuous Drain Current: 20A (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V
Power Dissipation (Max): 33.7W (Tc)
Mounting Type: Through Hole
Package: TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Operating Temperature: 150 °C (TJ)
ECCN: EAR99

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