The 389151-UPA1727G-E1-A is a N-channel MOSFET transistor designed for discrete semiconductor applications.

• GPTDescription: Manufactured by Renesas Electronics America, this MOSFET features a drain to source voltage (Vdss) of 60V and a continuous drain current (Id) of 10A @ 25°C.
• GPTDescription: With an on-resistance (Rds On) of 19mOhm @ 5A and 10V gate-source voltage (Vgs), it provides efficient power management.
• GPTDescription: The UPA1727G-E1-A is designed for surface mount applications and comes in an 8-PowerSOIC package.
• GPTDescription: It has a gate charge (Qg) of 45nC @ 10V gate-source voltage (Vgs) and an input capacitance (Ciss) of 2400pF @ 10V drain-source voltage (Vds).
• GPTDescription: With a maximum operating temperature of 150°C, it can withstand high-temperature environments.
• GPTDescription: Although this product is obsolete, it was widely used for power management in various applications.