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UPA1952TE-T1-A

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Part No	UPA1952TE-T1-A
Manufacturer	Renesas Electronics America
Catalog	HOT - SALES and EOL Components
Description	MOSFET P-CH SC-95
Sample
Rohs State	Need to verify
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Categories	Discrete Semiconductor Products
Manufacturer	Renesas Electronics America
Status	Obsolete
Transistor Polarity	2 P-Channel (Dual)
FET Feature	Logic Level Gate, 1.8V Drive
Vds - Drain-Source Breakdown Voltage	20V
Id - Continuous Drain Current	2A
Rds On (Maximum) at Id, Vgs	135mOhm at 1A, 4.5V
Gate Source Voltage(th) (Maximum) at Id	1.5V at 1mA
Gate Charge (Qg) (Maximum) at Vgs	2.3nC at 4V
Input Capacitance (Ciss) (Maximum) at Vds	272pF at 10V
Maximum Power	1.15W
Temperature Range - Operating	150°C
Mounting Style	SMD
Manufacturer Package	SC-95
Supplier Device Package	SC-95
Manufacturer Pack Quantity	3,000
MSL Level	1 (Unlimited)
Win Source Part Number	389286-UPA1952TE-T1-A
Popularity	Low
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian UPA1952TE-T1-A CAD Model

Alternative Products

Description

The UPA1952TE-T1-A is an obsolete electronic component manufactured by Renesas Electronics America. It has a low popularity rate and a balanced supply and demand status.

Maximum Power: 1.15W
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 2A
Suitable For: various applications that require P-channel transistors with a logic level gate

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