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Same model may have multiple batches, images only for reference.
UPA1952TE-T1-A Renesas Electronics America
Same model may have multiple batches, images only for reference.

UPA1952TE-T1-A

Part No UPA1952TE-T1-A
Manufacturer Renesas Electronics America
Catalog HOT - SALES and EOL Components
Description MOSFET P-CH SC-95
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Status Obsolete
Transistor Polarity 2 P-Channel (Dual)
FET Feature Logic Level Gate, 1.8V Drive
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 2A
Rds On (Maximum) at Id, Vgs 135mOhm at 1A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 1.5V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 2.3nC at 4V
Input Capacitance (Ciss) (Maximum) at Vds 272pF at 10V
Maximum Power 1.15W
Temperature Range - Operating 150°C
Mounting Style SMD
Manufacturer Package SC-95
Supplier Device Package SC-95
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 389286-UPA1952TE-T1-A
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UPA1952TE-T1-A CAD Model

Description

The UPA1952TE-T1-A is an obsolete electronic component manufactured by Renesas Electronics America. It has a low popularity rate and a balanced supply and demand status.

  • Maximum Power: 1.15W
  • Vds - Drain-Source Breakdown Voltage: 20V
  • Id - Continuous Drain Current: 2A
  • Suitable For: various applications that require P-channel transistors with a logic level gate

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