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Same model may have multiple batches, images only for reference.
UPA2720GR-E1-A Renesas Electronics America
Same model may have multiple batches, images only for reference.

UPA2720GR-E1-A

Part No UPA2720GR-E1-A
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 14A 8PSOP / N-Channel 30 V 14A (Ta) Surface Mount 8-PSOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas Electronics America Inc
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 14A (Ta)
Rds On (Max) @ Id, Vgs 6.6mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 10 V
Mounting SMD (SMT)
Supplier Device Package 8-PSOP
Package / Case 8-SOIC (0.173", 4.40mm Width)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-UPA2720GR-E1-A-RETR,RENRNSUPA2720GR-E1-A
Standard Package 2,500
Win Source Part Number 1102440-UPA2720GR-E1-A
Ultra Librarian 3D Model Ultra Librarian UPA2720GR-E1-A CAD Model

Description

The Renesas Electronics America UPA2720GR-E1-A is a N-channel MOSFET transistor with a drain to source voltage of 30V and a maximum continuous drain current of 14A @ 25°C.

  • Drain to Source Voltage: 30V
  • Maximum Continuous Drain Current: 14A @ 25°C
  • Rds On (Max): 6.6mOhm @ 7A, 10V
  • Vgs(th) (Max): 2.5V @ 1mA
  • RoHS Compliant: Yes
  • Input Capacitance: 2800 pF @ 10 V

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