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Same model may have multiple batches, images only for reference.
UPA679TB-T2-A
Same model may have multiple batches, images only for reference.

UPA679TB-T2-A

Part No UPA679TB-T2-A
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description Complementary MOSFET Comp MOSFET Nch
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 250 mA
Drain to Source Breakdown Voltage 20 V
Drain to Source Voltage (Vdss) 20 V
Gate to Source Voltage (Vgs) 12 V
Input Capacitance 28 pF
Max Power Dissipation 200 mW
Mount Surface Mount
Power Dissipation 200 mW
Rds On Max 570 mΩ
RoHS Compliant
Win Source Part Number 1102464-UPA679TB-T2-A
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Renesas Electronics America
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian UPA679TB-T2-A CAD Model

Description

The Renesas Electronics America UPA679TB-T2-A is a MOSFET transistor designed for RF applications.

  • Drain to Source Voltage: 20V
  • Input Capacitance: 28pF
  • Power Dissipation: 200mW
  • Continuous Drain Current: 250mA
  • Rds On Max: 570 mΩ
  • Mount: Surface mount
  • RoHS Compliant: Yes
  • Supply and Demand Status: Shortage

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