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Same model may have multiple batches, images only for reference.
2SCR372PHZGT100Q Real Image
Same model may have multiple batches, images only for reference.

2SCR372PHZGT100Q

Part No 2SCR372PHZGT100Q
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 120V 0.7A SOT89
Datasheet
2SCR372PHZGT100Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Rohm Semiconductor
Package Tape & Reel
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 700 mA
Voltage - Collector Emitter Breakdown (Max) 120 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 5V
Power - Max 500 mW
Frequency - Transition 220MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package SOT-89
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 855244-2SCR372PHZGT100Q
Ultra Librarian 3D Model Ultra Librarian 2SCR372PHZGT100Q CAD Model

Description

The 2SCR372PHZGT100Q is a single bipolar transistor designed for discrete semiconductor applications. It is an NPN transistor with a maximum power dissipation of 500mW.

  • Type: NPN
  • Application: Discrete semiconductor applications
  • Maximum Power Dissipation: 500mW
  • Voltage Collector Emitter Breakdown: 120V
  • Maximum Collector Current: 700mA
  • DC Current Gain: 120
  • Efficiency: Efficient amplification of signals
  • Operating Temperature Range: Up to 150°C
  • Application: Suitable for high-temperature environments
  • Manufacturer: Rohm Semiconductor
  • Mounting Type: Surface mount package
  • Versatility: Versatile choice for discrete semiconductor applications

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