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2SK2095N

Part No 2SK2095N
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 10A TO-220FN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Input Capacitance 1600pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 95 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FN
Dimension TO-220-3 Full Pack
Win Source Part Number 075589-2SK2095N
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Computers & Computer Peripherals, Motor Drive & Control, LED Lighting
Ultra Librarian 3D Model Ultra Librarian 2SK2095N CAD Model

Description

The 2SK2095N is a premium N-channel MOSFET engineered for applications requiring superior voltage handling and efficiency. This component is a mainstay in systems that necessitate high-speed operation and low power dissipation.

Key Features and Benefits

  • Low gate charge: Contributes to quicker switching and improved energy efficiency.
  • High voltage capacity: Capable of sustaining high voltage applications seamlessly.
  • Temperature resilience: Maintains functionality under thermal stress, ideal for high-temperature environments.
  • Robust design: Ensures reliability and durability in extensive operational scenarios.

Applications

  • Electric vehicle power management
  • Solar power inverters
  • AC-DC converters
  • High-frequency DC motor drivers
  • Consumer electronics

The use of the 2SK2095N in electric vehicle systems underscores its effectiveness in managing high current loads and improving overall vehicle energy efficiency. In the context of AC-DC converters, this MOSFET provides the advantage of minimized energy loss during conversion processes.

Additional Details

Engineered with cutting-edge technology, the 2SK2095N is enclosed in a durable package that enhances thermal conduction. This design minimizes heat buildup, contributing to a prolonged operational lifespan. Furthermore, its minimal input capacitance allows for responsiveness in dynamic electronic environments, crucial for innovative electronic projects.

Overall, the 2SK2095N offers a strategic advantage in applications demanding performance, efficiency, and resilience.

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