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Same model may have multiple batches, images only for reference.
DTB123ECT116 Real Image
Same model may have multiple batches, images only for reference.

DTB123ECT116

Part No DTB123ECT116
Manufacturer Rohm Semiconductor
Catalog RF Transistors (BJT)
Description PNP -500MA/-50V DIGITAL TRANSIST  /  Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 200 MHz 200 mW Surface Mount SST3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Rohm Semiconductor
Package Tape & Reel
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 39 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 200 MHz
Power - Max 200 mW
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SST3
Base Product Number DTB123
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names DTB123ECMGT116,DTB123ECT116DKR,DTB123ECT116TR,DTB123ECT116CT
Standard Package 3,000
Win Source Part Number 977416-DTB123ECT116
Ultra Librarian 3D Model Ultra Librarian DTB123ECT116 CAD Model

Description

The DTB123ECT116 is a pre-biased PNP transistor.

  • Maximum Power Dissipation: 200mW
  • Collector-Emitter Breakdown Voltage: 50V
  • DC Current Gain: 39 @ 50mA and 5V
  • Package: TO-236-3, SC-59, SOT-23-3
  • Packaging: Tape and Reel

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