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DTD513ZMT2L

Part No DTD513ZMT2L
Manufacturer Rohm Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PREBIAS NPN 150MW VMT3  /  Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 12 V 500 mA 260 MHz 150 mW Surface Mount VMT3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Rohm Semiconductor
Package Tape & Reel (TR)
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 12 V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 260 MHz
Power - Max 150 mW
Mounting SMD (SMT)
Package / Case SOT-723
Supplier Device Package VMT3
Base Product Number DTD513
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 8,000
Win Source Part Number 967974-DTD513ZMT2L
Ultra Librarian 3D Model Ultra Librarian DTD513ZMT2L CAD Model

Description

The Rohm Semiconductor DTD513ZMT2L is an NPN pre-biased transistor that is designed for use in various electronic devices.

  • Maximum Power Rating: 150mW
  • Collector-Emitter Breakdown Voltage: 12V

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Pricing & Ordering

Quantity Unit Price Ext. Price
965+ $0.0601 $57.9965
2,385+ $0.0485 $115.6725
3,660+ $0.0474 $173.4840
5,000+ $0.0462 $231.0000
6,580+ $0.0439 $288.8620
8,575+ $0.0404 $346.4300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,000 pieces
MOQ: 965 pcs
Order Increment : 1 pcs
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