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Same model may have multiple batches, images only for reference.
EMB18T2R
Same model may have multiple batches, images only for reference.

EMB18T2R

Part No EMB18T2R
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS DIGITAL BJT PNP 50V 100MA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Mfr Rohm Semiconductor
Package Tape & Reel
Product Status Active
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA (ICBO)
Frequency - Transition 250MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package EMT6
Base Product Number EMB18
Standard Package 8,000 pcs
REACH Status REACH Unaffected
Win Source Part Number 1057185-EMB18T2R
Ultra Librarian 3D Model Ultra Librarian EMB18T2R CAD Model

Description

The 1057185-EMB18T2R is a bipolar transistor array designed for discrete semiconductor applications manufactured by Rohm Semiconductor.

  • Category: Pre-Biased Bipolar Transistors
  • Series: EMB18
  • Package Type: Tape & Reel
  • Standard Package: 8,000 pieces
  • Maximum Power Rating: 150mW
  • Collector-Emitter Breakdown Voltage: Up to 50V
  • Maximum Collector Current: 100mA
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Vce Saturation: 300mV @ 1mA and 10mA
  • Current Cutoff: 500nA
  • DC Current Gain: 100 @ 1mA and 5V
  • Transition Frequency: 250MHz
  • Mounting Type: Surface Mountable
  • Package/Case: SOT-563 and SOT-666
  • Supplier Device Package: EMT6
  • Product Status: Active

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