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EMH25FHAT2R

Part No EMH25FHAT2R
Manufacturer Rohm Semiconductor
Catalog RF Transistors (BJT)
Description TRANS 2NPN 100MA EMT6  /  Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 100mA 250MHz 150mW Surface Mount EMT6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Resistor - Base (R1) 4.7kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Frequency - Transition 250MHz
Power - Max 150mW
Mounting SMD (SMT)
Package / Case SOT-563, SOT-666
Supplier Device Package EMT6
Base Product Number EMH25
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names EMH25FHAT2RCT,EMH25FHAT2RDKR,EMH25FHAT2RTR
Standard Package 8,000
Win Source Part Number 1057209-EMH25FHAT2R
Ultra Librarian 3D Model Ultra Librarian EMH25FHAT2R CAD Model

Description

The Win Source Part Number 1057209-EMH25FHAT2R is a dual NPN pre-biased transistor.

  • Power Max: 150mW
  • Frequency Transition: 250MHz
  • Supply Voltage Range: 5V
  • DC Current Gain (hFE): 80 @ 10mA, 5V
  • Package: SOT-563 and SOT-666
  • Fake Threat: Low
  • Supply and Demand: Balanced

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Shipping Information

Shipped from HK warehouse
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