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ES6U42 T2R

Part No ES6U42 T2R
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1A WEMT6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 2.1nC @ 4.5V
Max Input Capacitance 150pF @ 10V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 390 mOhm @ 1A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-WEMT
Dimension SOT-563, SOT-666
Win Source Part Number 051245-ES6U42 T2R
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ES6U42 T2R CAD Model

Description

Description

The ES6U42 T2R is an advanced variation of the ES6U42 model, offering improved specifications for demanding environments. It's perfect for users seeking enhanced performance in compact applications.

Applications/Projects

  • High-frequency power converters
  • Smart grids
  • Advanced computing systems
  • Renewable energy solutions

Features and Benefits

  • Superior thermal management
  • Lightweight and easy to install
  • Reliable and long-lasting performance
  • Reduced electromagnetic interference

Additional Details

This component ensures a balance between efficiency and power, making it suitable for both industrial and consumer applications.

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Shipping Information

Shipped from HK warehouse
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