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Same model may have multiple batches, images only for reference.
IMB10AT110 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

IMB10AT110

Part No IMB10AT110
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS DUAL PNP SMT6
Datasheet
IMB10AT110 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SMT6
Win Source Part Number 102838-IMB10AT110
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IMB10AT110 CAD Model

Description

The IMB10AT110 from Rohm Semiconductor is an active SMT6 transistor with a frequency transition of 250MHz.

  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 300mW
  • Configuration: 2 PNP - Pre-Biased (Dual)
  • Typical Gain: 80 @ 10mA, 5V

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Quantity Unit Price Ext. Price
495+ $0.1177 $58.2615
1,195+ $0.0967 $115.5565
1,855+ $0.0936 $173.6280
2,555+ $0.0906 $231.4830
3,300+ $0.0875 $288.7500
4,415+ $0.0785 $346.5775
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