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Same model may have multiple batches, images only for reference.
QS5U28TR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

QS5U28TR

Part No QS5U28TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2A TSMT5
Datasheet
QS5U28TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 4.8nC @ 4.5V
Max Input Capacitance 450pF @ 10V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 125 mOhm @ 2A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT5
Dimension SOT-23-5 Thin, TSOT-23-5
Win Source Part Number 046009-QS5U28TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian QS5U28TR CAD Model

Description

The Rohm Semiconductor 046009-QS5U28TR is a P-channel MOSFET with a Schottky diode feature that is isolated.

  • Manufacturer: Rohm Semiconductor
  • Maximum Power Dissipation: 1.25W @ Ta
  • Drain-Source Breakdown Voltage: 20V
  • Mounting Type: SMD (SMT)
  • Package: TSMT5
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On @ Id, Vgs: 125 mOhm @ 2A, 4.5V
  • Supply and Demand Status: balanced, making it readily available

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6357 $50.8560
195+ $0.5216 $101.7120
300+ $0.5053 $151.5900
410+ $0.4890 $200.4900
530+ $0.4727 $250.5310
710+ $0.4238 $300.8980
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Availability: 30,000 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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