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Same model may have multiple batches, images only for reference.
R5016ANX Real Image
Same model may have multiple batches, images only for reference.

R5016ANX

Part No R5016ANX
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 16A TO-220FM
Datasheet
R5016ANX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1mA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 1800pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FM
Dimension TO-220-2 Full Pack
Win Source Part Number 042282-R5016ANX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian R5016ANX CAD Model

Description

The R5016ANX is a MOSFET designed for discrete semiconductor products. Manufactured by Rohm Semiconductor, it is a medium popularity product with a balanced supply and demand status.

  • Applications: power supplies and motor control
  • Drain-Source Breakdown Voltage: 500V
  • Maximum Rds On: 270 mOhm @ 8A, 10V
  • Status: This product is not for new designs
  • Maximum Temperature Range: 150°C

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