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Same model may have multiple batches, images only for reference.
R5016FNX Real Image
Same model may have multiple batches, images only for reference.

R5016FNX

Part No R5016FNX
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 16A TO-220FM
Datasheet
R5016FNX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 1700pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 325 mOhm @ 8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FM
Dimension TO-220-2 Full Pack
Win Source Part Number 1091196-R5016FNX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian R5016FNX CAD Model

Description

The Rohm Semiconductor R5016FNX is a MOSFET from designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 50W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Polarity: N-Channel
  • Continuous Drain Current: 16A (Ta)
  • Gate-Source Threshold Voltage: 5V @ 1mA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 325 mOhm @ 8A, 10V
  • Package: TO-220FM
  • Temperature Range: 150℃ (TJ)
  • Supply and Demand Status: Balanced

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34+ $5.1789 $176.0826
47+ $5.0119 $235.5593
60+ $4.8448 $290.6880
80+ $4.3436 $347.4880
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